MRF6S18060NR1 MRF6S18060NBR1
13
RF Device Data
Freescale Semiconductor
Figure 25. Series Equivalent Source and Load Impedance ? 1800 MHz
f
MHz
Zsource
Ω
Zload
Ω
1805
1840
4.16 - j7.56
3.56 - j7.21
3.89 - j7.40
3.29 - j4.91
3.10 - j4.69
2.88 - j4.45
VDD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 65 W CW
1880
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zo
= 10
Ω
f = 1880 MHz
Zload
Zsource
f = 1805 MHz
f = 1880 MHz
f = 1805 MHz
相关PDF资料
MRF6S18100NR1 MOSFET RF N-CH 28V 100W TO2704
MRF6S18140HSR5 MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100HSR5 MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5 MOSFET RF N-CHAN 28V 19W NI-780S
MRF6S19140HSR5 MOSFET RF N-CHAN 28V 29W NI-880S
MRF6S19200HSR5 MOSFET RF N-CH 56W 28V NI780S
相关代理商/技术参数
MRF6S18060NR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3 功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18140HR3_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray